LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
IZ working current - 50 mA
Ptot total power dissipation Tamb = 50 °C - 400 mW
Tstg storage temperature -65 +200 °C
Tj junction temperature - 200 °C
Tamb operating ambient temperature -55 +100 °C
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
Notes
1. The quoted values of DVref are based on a constant current IZ. Two factors can cause DVref to change, namely the
differential resistance rdif and the temperature coefficient SZ.
a) As the max. rdif of the device can be 15 W, a change of 0.01 mA in the current through the reference diode will
result in a DVref of 0.01 mA ´ 15 W = 0.15 mV. This level of DVref is not significant on a 1N821 (DVref < 96 mV),
it is however very significant on a 1N829 (DVref < 5 mV).
b) The temperature coefficient of the reference voltage SZ is a function of IZ. Reference diodes are classified at the
specified test current and the SZ of the reference diode will be different at different levels of IZ. The absolute value
of IZ is important, however, the stability of IZ, once the level has been set, is far more significant. This applies
particularly to the 1N829. The effect of the stability of IZ on SZ is shown in Fig.3.
2. All reference diodes are characterized by the ‘box method’. This guarantees a maximum voltage excursion (DVref)
over the specified temperature range, at the specified test current (IZ), verified by tests at indicated temperature
points within the range. VZ is measured and recorded at each temperature specified. The DVref between the highest
and lowest values must not exceed the maximum DVref given. Therefore the temperature coefficient is only given as
a reference. It may be derived from:
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Vref reference voltage IZ =7.5 mA 5.89 6.20 6.51 V
ïDVrefï reference voltage excursion IZ =7.5 mA; test points for
Tamb: -55; +25; +75; +100 °C;
see Fig.2; notes 1 and 2
1N821; 1N821A - - 96 mV
1N823; 1N823A - - 48 mV
1N825; 1N825A - - 19 mV
1N827; 1N827A - - 9 mV
1N829; 1N829A - - 5 mV
ïSZ
ï temperature coefficient IZ = 7.5 mA: see Fig.3;
1N821; 1N821A notes 1 and 2 - - 0.01 %/K
1N823; 1N823A - - 0.005 %/K
1N825; 1N825A - - 0.002 %/K
1N827; 1N827A - - 0.001 %/K
1N829; 1N829A - - 0.0005 %/K
rdif differential resistance IZ = 7.5 mA; see Fig.4
1N821 to 1N829 - - 15 W
1N821A to 1N829A - - 10 W