| 品牌 | Vishay威世 | 型号 | 2N7002K-T1-GE3 |
| 应用范围 | 复合 | 功率特性 | 中功率 |
| 频率特性 | 低频 | 极性 | NPN型 |
| 结构 | 点接触型 | 材料 | 硅(Si) |
| 封装形式 | 贴片型 | 封装材料 | 塑料封装 |
| 截止频率fT | 100（MHz） | 集电极最大允许电流ICM | 0.1（A） |
| 集电极最大耗散功率PCM | 0.1（W） | 营销方式 | 代理 |
| 产品性质 | 热销 | | |
Vishay Siliconix
2N7002K
N-Channel 60-V (D-S) MOSFET
FEATURES
•Halogen-free According to IEC 61249-2-21
Definition
• Low On-Resistance: 2Ω
• Low Threshold: 2 V (typ.)
• Low Input Capacitance: 25 pF
• Fast Switching Speed: 25 ns
• Low Input and Output Leakage
• TrenchFET®Power MOSFET
• 2000 V ESD Protection
•Compliant to RoHS Directive 2002/95/EC
BENEFITS
• Low Offset Voltage
• Low-Voltage Operation
• Easily Driven Without Buffer
• High-Speed Circuits
• Low Error Voltage
APPLICATIONS
• Direct Logic-Level Interface: TTL/CMOS
• Drivers: Relays, Solenoids, Lamps, Hammers, Display,
Memories, Transistors, etc.
• Battery Operated Systems
• Solid-State Relays
PRODUCT SUMMARY
VDS(V) RDS(on)(Ω) ID(mA)
60 2 at VGS= 10 V 300
T O-236
SOT -23
1
2
3
Top View
2N7002K (7K)*
* Marking Code
G
S
D
Ordering Information:2N7002K-T1
2N7002K-T1-E3 (Lead (Pb)-free)
2N7002K-T1-GE3 (Lead (Pb)-free and Halogen-free)
Notes:
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 board.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
ABSOLUTE MAXIMUM RATINGSTA= 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage VDS60
V
Gate-Source Voltage VGS± 20
Continuous Drain Current (TJ= 150 °C)b
TA= 25 °C
ID
300
TA= 100 °C 190 mA
Pulsed Drain CurrentaIDM800
Power Dissipationb
TA= 25 °C
PD
0.35
W
TA= 100 °C 0.14
Maximum Junction-to-AmbientbRthJA350 °C/W
Operating Junction and Storage Temperature Range TJ,Tstg- 55 to 150 °C
www.vishay.com
2
Document Number: 71333
S09-0857-Rev. E, 18-May-09
Vishay Siliconix
2N7002K
Notes:
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW≤300 μs duty cycle≤2 %.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONSTA= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions
Limits
Min. Typ.aMax. Unit
Static
Drain-Source Breakdown Voltage VDSVGS= 0 V, ID= 10 μA 60
V
Gate-Threshold Voltage VGS(th)VDS= VGS, ID= 250 μA 1 2.5
Gate-Body Leakage IGSS
VDS= 0 V, VGS= ± 20 V ± 10
μA
VDS= 0 V, VGS= ± 15 V 1
VDS= 0 V, VGS= ± 10 V ± 150 nA
VDS= 0 V, VGS= ± 10 V, TJ= 85 °C ± 1000
VDS= 0 V, VGS= ± 5 V ± 100
Zero Gate Voltage Drain Current IDSS
VDS= 60 V, VGS= 0 V 1
μA
VDS= 60 V, VGS= 0 V , TJ= 125 °C 500
On-State Drain CurrentaID(on)
VGS= 10 V, VDS= 7.5 V 800
mA
VGS= 4.5 V, VDS= 10 V 500
Drain-Source On-ResistanceaRDS(on)
VGS= 10 V, ID= 500 mA 2
Ω
VGS= 4.5 V, ID= 200 mA 4
Forward TransconductanceagfsVDS= 10 V, ID= 200 mA 100 mS
Diode Forward Voltage VSDIS= 200 mA, VGS= 0 V 1.3 V
Dynamica
Total Gate Charge Qg
VDS= 10 V, VGS= 4.5 V
ID≅250 mA
0.4 0.6 nC
Input Capacitance Ciss
VDS= 25 V, VGS= 0 V
f = 1 MHz
30
Output Capacitance Coss6 pF
Reverse Transfer Capacitance Crss2.5
Switchinga, b, c
Turn-On Time td(on)VDD= 30 V, RL= 150Ω