| 品牌 | Vishay威世 | 型号 | LS4148-GS08 |
| 产品类型 | 开关管 | 结构 | 点接触型 |
| 材料 | 锗(Ge) | 封装形式 | 贴片型 |
| 封装材料 | 玻璃封装 | 功率特性 | 小功率 |
| 频率特性 | 低频 | 出光面特征 | 圆灯 |
| 发光强度角分布 | 标准型 | 正向直流电流IF | 1（A） |
| 最高反向电压 | 100（V） | | |
LS4148, LS4448
Document Number 85561
Rev. 1.9, 20-Aug-10
Vishay Semiconductors
www.vishay.com
1
9612009
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com,DiodesAsia@vishay.com,DiodesEurope@vishay.com
Small Signal Fast Switching Diodes
Features
• Silicon Epitaxial Planar Diodes
• Electrical data identical with the devices
1N4148 and 1N4448 respectively
• Quadro Melf package
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Applications
• Extremely fast switches
Mechanical Data
Case:QuadroMELF SOD-80
Weight:approx. 34 mg
Cathode band color:black
Packaging codes/options:
GS18/10 k per 13" reel (8 mm tape), 10 k/box
GS08/2.5 k per 7" reel (8 mm tape), 12.5 k/box
Parts Table
Absolute Maximum Ratings
Tamb= 25 °C, unless otherwise specified
Thermal Characteristics
Tamb= 25 °C, unless otherwise specified
Part Type differentiation Ordering code Type Marking Remarks
LS4148 VF= max. 1000 mV at IF= 50 mA LS4148-GS18 or LS4148-GS08 - Tape and Reel
LS4448 VF= max. 1000 mV at IF= 100 mA LS4448-GS18 or LS4448-GS08 - Tape and Reel
Parameter Test condition Symbol Value Unit
Repetitive peak reverse voltage VRRM100 V
Reverse voltage VR75 V
Peak forward surge current tp= 1 μs IFSM2 A
Repetitive peak forward current IFRM500 mA
Forward continuous current IF300 mA
Average forward current VR= 0 IFAV150 mA
Power dissipation Ptot500 mW
Parameter Test condition Symbol Value Unit
Thermal resistance junction to
ambient air
On PC board
50 mm x 50 mm x 1.6mm
RthJA300 K/W
Junction temperature Tj175 °C
Storage temperature range Tstg- 65 to + 175 °C
www.vishay.com
2
Document Number 85561
Rev. 1.9, 20-Aug-10
LS4148, LS4448
Vishay Semiconductors
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com,DiodesAsia@vishay.com,DiodesEurope@vishay.com
Electrical Characteristics
Tamb= 25 °C, unless otherwise specified
Typical Characteristics
Tamb= 25 °C, unless otherwise specified
Parameter Test condition Part Symbol Min. Typ. Max. Unit
Forward voltage
IF= 5 mA LS4448 VF620 720 mV
IF= 50 mA LS4148 VF860 1000 mV
IF= 100 mA LS4448 VF930 1000 mV
Reverse current
VR= 20 V IR25 nA
VR= 20 V, Tj= 150 °C IR50 μA
VR= 75 V IR5 μA
Breakdown voltage
IR= 100 μA, tp/T = 0.01,
tp= 0.3 ms
V(BR)100 V
Diode capacitance VR= 0, f = 1 MHz, VHF= 50 mV CD4 pF
Rectification efficiency VHF= 2 V, f = 100 MHzçr45 %
Reverse recovery time
IF= IR= 10 mA, iR= 1 mA trr8 ns
IF= 10 mA, VR= 6 V,
iR= 0.1 x IR, RL= 100Ù
trr4 ns
Figure 1. Forward Current vs. Forward Voltage
Figure 2. Forward Current vs. Forward Voltage
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