Dated : 15/06/2009
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
LL4148
Silicon Epitaxial Planar Switching Diode
Fast switching diode in MiniMELF case especially suited
for automatic surface mounting
Absolute Maximum Ratings (Ta = 25 OC)
Parameter Symbol Value Unit
Peak Reverse Voltage VRM 100 V
Reverse Voltage VR 75 V
Average Rectified Forward Current IF(AV) 200 mA
Non-repetitive Peak Forward Surge Current at t = 1 s
at t = 1 ms
at t = 1 μs
IFSM
0.5
1
4
A
Power Dissipation Ptot 500 1) mW
Junction Temperature Tj 175 OC
Storage Temperature Range Tstg - 65 to + 175 OC
1) Valid provided that electrodes are kept at ambient temperature.
LL-34
Dated : 15/06/2009
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
LL4148
Characteristics at Ta = 25 OC
Parameter Symbol Min. Max. Unit
Forward Voltage
at IF = 10 mA VF - 1 V
Leakage Current
at VR = 20 V
at VR = 75 V
at VR = 20 V, Tj = 150 OC
IR
IR
IR
-
-
-
25
5
50
nA
μA
μA
Reverse Breakdown Voltage
tested with 100 μA Pulses V(BR)R 100 - V
Capacitance
at VR = 0, f = 1 MHz Ctot - 4 pF
Voltage Rise when Switching ON
tested with 50 mA Forward Pulses
tp = 0.1 s, Rise Time < 30 ns, fp = 5 to 100 KHz
Vfr - 2.5 V
Reverse Recovery Time
at IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Ω trr - 4 ns
Thermal Resistance Junction to Ambient Air RthA - 0.35 1) K/mW
Rectification Efficiency
at f = 100 MHz, VRF = 2 V
ηV 0.45 - -
1) Valid provided that electrodes are kept at ambient temperature.
~~
~
2nF
5K
Rectification Efficiency Measurement Circuit
60
VRF =2V
Vo
Dated : 15/06/2009
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Admissible power dissipation
versus ambient temperature
Valid provided that electrodes are kept at ambient
temperature
400
300
200
100
0 100 200 C
Ptot
Tamb
LL 4148
o
mW
VF
10 -1
1
10
10 2
103
LL 4148
iF
Forward characteristics
5
10 4
2
5
2
10 2
10
LL 4148
rf
Tj=25 C
f=1KHz
10 -2
0 2 V
103
5
2
5
2
1
10-2 10 -1 1 10 10 2mA
IF
0
500
600
700
800
900
1000
0.7
0.8
0
VR
0 6 10 V
1.1
1.0
0.9
Ctot(VR)
Ctot(0V)
LL 4148
Relative capacitance
versus reverse voltage
2 4 8
Dynamic forward resistance
versus forward current
o
Tj=100 C Tj=25o C o
1
Tj=25 C
f=1MHz
o
LL4148
Ambient Temperature: Ta ( OC)
0 25 100 150
0
100
200
300
Power Dissipation: Ptot (mW)
400
500
200
Power Derating Curve
Dated : 15/06/2009
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
LL4148
Admissible repetitive peak forward current versus pulse duration
Valid provided that electrodes are kept at ambient temperature
LL 4148
Tj
VR=20V
10
0.1
v=0
1
4
5
2
0.1
3
10 -5 2
0.5
5
3
4
2
10
4
3
5
2
IFRM
0.2
5 10 -4 2 5
0
100
A
10
2
5
1
2
5
10 2
100
Leakage current
versus junction temperature
4
5
nA
3
5
2
2
IR
10
10
I v=tp/T T=1/fp
5
tp
-3 2 5 10 -2 2 5 10 -1 2
tp
1 2 5 10 s
T
IFRM
t
200 o C
LL 4148